Järvinen, T., Hosseini Shokouh, S.-H., Sainio, S., Pitkänen, O., & Kordas, K. (2022). Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips. Nanoscale Advances, 4(15), 3243–3249. https://doi.org/10.1039/D2NA00313A
Ultrafast photoresponse of vertically oriented TMD films probed in a vertical electrode configuration on Si chips
|Author:||Järvinen, Topias1; Hosseini Shokouh, Seyed-Hossein1; Sainio, Sami1,2;|
1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014 Oulu, Finland
2SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94025, USA
|Online Access:||PDF Full Text (PDF, 1.4 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2023031431575
Royal Society of Chemistry,
|Publish Date:|| 2023-03-14
Integrated photodetectors based on transition metal dichalcogenides (TMDs) face the challenge of growing their high-quality crystals directly on chips or transferring them to the desired locations of components by applying multi-step processes. Herein, we show that vertically oriented polycrystalline thin films of MoS2 and WS2 grown by sulfurization of Mo and W sputtered on highly doped Si are robust solutions to achieve on-chip photodetectors with a sensitivity of up to 1 mA W−1 and an ultrafast response time in the sub-μs regime by simply probing the device in a vertical arrangement, i.e., parallel to the basal planes of TMDs. These results are two orders of magnitude better than those measured earlier in lateral probing setups having both electrodes on top of vertically aligned polycrystalline TMD films. Accordingly, our study suggests that easy-to-grow vertically oriented polycrystalline thin film structures may be viable components in fast photodetectors as well as in imaging, sensing and telecommunication devices.
|Pages:||3243 - 3249|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
216 Materials engineering
222 Other engineering and technologies
116 Chemical sciences
Metal film deposition and TEM analysis were carried out with the support of the Centre for Material Analysis, University of Oulu, Finland. Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under contract no. DE-AC02-76SF00515.
© 2022 The Author(s). This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.