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Low-energy Se ion implantation in MoS2 monolayers |
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| Author: | Bui, Minh N.1,2; Rost, Stefan2,3; Auge, Manuel4; |
| Organizations: |
1Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425, Jülich, Germany 2Department of Physics, RWTH Aachen University, 52074, Aachen, Germany 3Peter Grünberg Institute (PGI-1) and Institute for Advanced Simulation (IAS-1), Forschungszentrum Jülich and JARA, 52425, Jülich, Germany
4II. Institute of Physics, Georg-August-University Göttingen, 37077, Göttingen, Germany
5Institute of Ion Beam Physics and Materials Research, Helmholtz‐Zentrum Dresden‐Rossendorf, 01328, Dresden, Germany 6Department of Applied Physics, Aalto University School of Science, P.O.Box 11100, FI-00076, Aalto, Finland 7Microelectronics Research Unit, University of Oulu, PO Box 8000, FI-90014, Oulu, Finland 8Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425, Jülich, Germany 9Department of Physics, Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland 10SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, WA4 4AD, UK 11School of Chemical and Process Engineering, University of Leeds, Leeds, LS2 9JT, UK |
| Format: | article |
| Version: | published version |
| Access: | open |
| Online Access: | PDF Full Text (PDF, 1.2 MB) |
| Persistent link: | http://urn.fi/urn:nbn:fi-fe2023031732296 |
| Language: | English |
| Published: |
Springer Nature,
2022
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| Publish Date: | 2023-03-17 |
| Description: |
AbstractIn this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2−2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy. see all
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| Series: |
npj 2D materials and applications |
| ISSN: | 2397-7132 |
| ISSN-E: | 2397-7132 |
| ISSN-L: | 2397-7132 |
| Volume: | 6 |
| Issue: | 1 |
| Article number: | 42 |
| DOI: | 10.1038/s41699-022-00318-4 |
| OADOI: | https://oadoi.org/10.1038/s41699-022-00318-4 |
| Type of Publication: |
A1 Journal article – refereed |
| Field of Science: |
114 Physical sciences 216 Materials engineering |
| Subjects: | |
| Funding: |
This project is supported by the “Integration of Molecular Components in Functional Macroscopic Systems” initiative of Volkswagen Foundation. We would like to thank the staff at the Helmholtz Nano Facility63 of Forschungszentrum Jülich for helping with substrate fabrication; Dr. Sven Borghardt for setting up equipment and advices on sample preparation; Dr. Christoph Friedrich for fruitful exchanges. We acknowledge the computing time granted through JARA-HPC on the supercomputer JURECA at Forschungszentrum Jülich and also CSC–IT Center for Science Ltd. (Finland). A.V.K. acknowledges funding from the German Research Foundation (DFG), Project KR 4866/2-1 (406129719) and the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. Generous grants of computer time from the Technical University of Dresden computing cluster (TAURUS) and the High Performance Computing Center (HLRS) in Stuttgart, Germany, are gratefully appreciated. E.O.C. acknowledges the support by the Irish Research Council under the Postgraduate Government of Ireland grant GOIPG/2015/2410. |
| Copyright information: |
© The Author(s) 2022. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
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https://creativecommons.org/licenses/by/4.0/ |