Interface effects of strain-energy potentials on phase transition characteristics of VO₂ thin-films
|Author:||Lappalainen, Jyrki1; Kangaspuoskari, Matti1|
1Civil Engineering Research Unit, Faculty of Technology, University of Oulu, P.O. Box 8000, FIN-90014 Oulu, Finland
|Online Access:||PDF Full Text (PDF, 9.9 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe20230906120665
American Chemical Society,
|Publish Date:|| 2023-09-06
Metal–insulator-transition (MIT) of VO₂ has attracted strong attention as a potential phenomenon to be utilized in nanostructured devices. Dynamics of MIT phase transition determines the feasibility of VO₂ material properties in various applications, for example, photonic components, sensors, MEMS actuators, and neuromorphic computing. However, conventional interface strain model predicts the MIT effect accurately for bulk, but fairly for the thin films, and thus, a new model is needed. It was found that the VO₂ thin film–substrate interface plays a crucial role in determining transition dynamics properties. In VO₂ thin films on different substrates, coexistence of insulator-state polymorph phases, dislocations, and a few unit cell reconstruction layer form an interface structure minimizing strain energy by the increase of structural complexity. As a consequence, MIT temperature and hysteresis of structure increased as the transition enthalpy of the interface increased. Thus, the process does not obey the conventional Clausius–Clapeyron law anymore. A new model is proposed for residual strain energy potentials by implementing a modified Cauchy strain. Experimental results confirm that the MIT effect in constrained VO₂ thin films is induced through the Peierls mechanism. The developed model provides tools for strain engineering in the atomic scale for crystal potential distortion effects in nanotechnology, such as topological quantum devices.
|Pages:||21083 - 21095|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
212 Civil and construction engineering
© 2023 The Authors. Published by American Chemical Society. This publication is licensed under CC-BY 4.0.