University of Oulu

2 GHz +14 dBm CMOS power amplifier for Low Power Wide Area Networks

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Author: Zapata, David1
Organizations: 1University of Oulu, Faculty of Information Technology and Electrical Engineering, Communications Engineering
Format: ebook
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 6.7 MB)
Pages: 95
Persistent link:
Language: English
Published: Oulu : D. Zapata, 2020
Publish Date: 2020-08-26
Thesis type: Master's thesis (tech)
Tutor: Pärssinen, Aarno
Reviewer: Rahkonen, Timo
Pärssinen, Aarno


The design of a radiofrequency power amplifier (RF PA) for narrowband low-power wide area networks is presented in this thesis. Particularly, this RF PA is compliant with the 3GPP TS 36.101 standard for a NB1 device within the Power Class 6. To minimize silicon area consumption, this CMOS RF PA employs a single-ended single-stage topology, avoiding inter-stage matching network inductors and output baluns. This RF PA produces +14 dBm of output power with a PAE of 25% and an EVM better than 4% (−28 dB). Also, its out-of-band and spurious emissions satisfy the standard specifications with a large margin. Furthermore, it provides high ruggedness, tolerating an antenna mismatch with a VSWR of 8:1.

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Copyright information: © David Zapata, 2020. This publication is copyrighted. You may download, display and print it for your own personal use. Commercial use is prohibited.