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2 GHz +14 dBm CMOS power amplifier for Low Power Wide Area Networks |
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| Author: | Zapata, David1 |
| Organizations: |
1University of Oulu, Faculty of Information Technology and Electrical Engineering, Communications Engineering |
| Format: | ebook |
| Version: | published version |
| Access: | open |
| Online Access: | PDF Full Text (PDF, 6.7 MB) |
| Pages: | 95 |
| Persistent link: | http://urn.fi/URN:NBN:fi:oulu-202007042728 |
| Language: | English |
| Published: |
Oulu : D. Zapata,
2020
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| Publish Date: | 2020-08-26 |
| Thesis type: | Master's thesis (tech) |
| Tutor: |
Pärssinen, Aarno |
| Reviewer: |
Rahkonen, Timo Pärssinen, Aarno |
| Description: |
Abstract The design of a radiofrequency power amplifier (RF PA) for narrowband low-power wide area networks is presented in this thesis. Particularly, this RF PA is compliant with the 3GPP TS 36.101 standard for a NB1 device within the Power Class 6. To minimize silicon area consumption, this CMOS RF PA employs a single-ended single-stage topology, avoiding inter-stage matching network inductors and output baluns. This RF PA produces +14 dBm of output power with a PAE of 25% and an EVM better than 4% (−28 dB). Also, its out-of-band and spurious emissions satisfy the standard specifications with a large margin. Furthermore, it provides high ruggedness, tolerating an antenna mismatch with a VSWR of 8:1. see all
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| Subjects: | |
| Copyright information: |
© David Zapata, 2020. This publication is copyrighted. You may download, display and print it for your own personal use. Commercial use is prohibited. |