Ka-band stacked power amplifier supporting 3GPP new radio FR2 band n258 implemented using 45 nm CMOS SOI
Aikio, Janne P.; Sethi, Alok; Hietanen, Mikko; Rusanen, Jere; Rahkonen, Timo; Pärssinen, Aarno (2021-07-22)
Aikio, J.P.; Sethi, A.; Hietanen, M.; Rusanen, J.; Rahkonen, T.; Pärssinen, A. Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI. Appl. Sci. 2021, 11, 6708. https://doi.org/10.3390/app11156708
© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
https://creativecommons.org/licenses/by/4.0/
https://urn.fi/URN:NBN:fi-fe2021121460328
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Abstract
This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with 13.7 dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are 20.5 dBm, 29% and 18.8 dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of 12.5% was measured at an average channel power of 14.5 dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal.
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